Characterization in Silicon Processing by Yale Strausser

By Yale Strausser

This booklet stories suggestions through which silicon processing engineers operating with semiconductors can meet the calls for for greater fabric caliber and function made valuable by means of more and more stringent necessities, resembling reducing barrier movie thicknesses. one of the strategies defined are tracking the effectiveness of floor cleansing procedures; opting for the quantity of silicon intake in the course of barrier movie and silicide progress; and silicon selective epitaxial development.

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58 Preclean Quality The presence of the patterned mask complicates the precleaning process for selective epitaxial growth. First, formation of the window openings by plasma etch processes can damage the silicon substrate or leave etch residues on the surface; sacrificial oxidation or HCl etch may be required to remove damage or residues. 3'4'62 Such "undercutting" can result in undesirable lifting of the masking layer near the window opening. 3 and "Defect Density and Growth Morphology" in this section.

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