Diffusion in Semiconductors by C.E. Allen, D.L. Beke, H. Bracht, C.M. Bruff, M.B. Dutt, G.

By C.E. Allen, D.L. Beke, H. Bracht, C.M. Bruff, M.B. Dutt, G. Erdelyi, P. Gas, F.M. d'Heurle, G.E. Murch, E.G. Seebauer, B.L. Sharma, N.A. Stolwijk

Subvolume A of 2 subvolumes on Diffusion in Semi-conductors and Non-Metallic Solids comprises a entire and important compilation of knowledge for the subsequent fabrics and houses: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and floor diffusion on semiconductors. even though lots of the silicides aren't semiconducting, this bankruptcy is incorporated the following simply because a few them became built-in within the Si expertise and since they weren't lined within the past quantity III/26 on diffusion in metal elements. Subvolume A features a CD-ROM.

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Lando lt -Bö rnst ein New Series III/33A 1-14 1 Introduction [Ref. p. 1 Direct interstitial mechanism Atoms in interstitial positions are point defects, the successive jumps of them on interstitial sites are not correlated (Fig. 8, a). This is the direct interstitial mechanism which is typical for atoms of considerably smaller size than the atoms of the host crystal (the atomic fraction of self-interstitials is usually negligible in comparision to other intrinsic point defects). 2 Indirect interstitial or interstitialcy mechanism This is a variant of the above mechanism: the tracer atom now has a correlated migration occurring on both substitutional and interstitial positions during subsequent jumps (Fig.

Appl. Phys. 41 (1970) 1935. : J. Lumin. 3 (1971) 395. : J. Solid State Chem. 3 (1971) 406. : J. Nucl. Mater. 47 (1973) 229. : J. Appl. Phys. 44 (1973) 5639. : Z. Phys. Chem. (Frankfurt) 89 (1974) 15. : Z. Phys. Chem. 93 (1974) 33. : Z. Phys. Chem. (Frankfurt) 90 (1974) 172. : Ber. Bunsenges. Phys. Chem. 79 (1975) 1134. : J. Appl. Phys. 46 (1975) 4251. : Solid State Electron 19 (1976) 731. : Izv. Akad. Nauk. SSSR, Neorg. Mater. 12 (1976) 1163. : Solid State Electron. 19 (1976) 489. : Ber. Bunsenges.

66A1, 91P1, 90M1]. d a e b f c Fig. 8. Atomic mechanisms of diffusion: a: direct interstitial, b: indirect interstitial, c: ring, d: vacancy, e: dissociative, f: kick-out mechanisms. Lando lt -Bö rnst ein New Series III/33A 1-14 1 Introduction [Ref. p. 1 Direct interstitial mechanism Atoms in interstitial positions are point defects, the successive jumps of them on interstitial sites are not correlated (Fig. 8, a). This is the direct interstitial mechanism which is typical for atoms of considerably smaller size than the atoms of the host crystal (the atomic fraction of self-interstitials is usually negligible in comparision to other intrinsic point defects).

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